Skip to Main content Skip to Navigation
Journal articles

Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral response

Abstract : For short wave infrared (SWIR) sensing, InGaAs is the leading technology combining high carrier mobility, high homogeneity and complete control over n-top doping. In the meanwhile, numerous alternative materials have tried to compete with InGaAs. Among them, colloidal nanocrystals with narrow band gap can address the current issue in designing cost-effective sensors for the SWIR range. Rather than pitting these two materials against each other, here we design a synergistic duo in which HgTe nanocrystals are used to broaden the spectral range of InGaAs while lifting the lattice matching constraints. We propose a diode geometry where a p-type HgTe NC array is coupled with n-type InGaAs wires which are used as high mobility (µ>1000 cm 2 .V-1 s-1) minority carrier extractors. This approach also demonstrates that Van der Waals heterostructures are not limited to graphene-like materials and that bulk-like III-V semiconductors can also be light sensitized by colloidal nanoparticles. This work paves the way toward further synergies between epitaxially grown and colloidally grown semiconductors for infrared detection.
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-03549261
Contributor : emmanuel lhuillier Connect in order to contact the contributor
Submitted on : Monday, January 31, 2022 - 1:06:17 PM
Last modification on : Tuesday, July 19, 2022 - 11:47:34 AM
Long-term archiving on: : Sunday, May 1, 2022 - 7:15:37 PM

File

APL21-AR-09209.pdf
Files produced by the author(s)

Identifiers

Citation

Adrien Khalili, Claire Abadie, Tung Huu Dang, Audrey Chu, Eva Izquierdo, et al.. Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral response. Applied Physics Letters, American Institute of Physics, 2022, 120 (5), pp.051101. ⟨10.1063/5.0076708⟩. ⟨hal-03549261⟩

Share

Metrics

Record views

72

Files downloads

16