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Article Dans Une Revue ECS Journal of Solid State Science and Technology Année : 2022

Quasi In Situ XPS on a SiO x F y Layer Deposited on Silicon by a Cryogenic Process

Résumé

A silicon oxyfluoride layer was deposited on a-Si samples using SiF 4 /O 2 plasma at different temperatures between −100°C and −40 °C. In situ X-ray photoelectron spectroscopy measurements were then performed to characterize the deposited layer. The sample was then brought back to room temperature and analyzed again. It has been shown that a temperature below −65 °C is needed to significantly enhance the physisorption of SiF x species. Hence, in this condition, a F-rich oxyfluoride layer, stable at low temperature only, is physisorbed. Above this threshold temperature, the native silicon oxide layer is fluorinated and the proportion of O in the deposited layer is higher and remains stable even when the sample is brought back to room temperature.
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Dates et versions

hal-03565995 , version 1 (13-07-2022)

Identifiants

Citer

G. Antoun, A. Girard, T. Tillocher, P. Lefaucheux, J. Faguet, et al.. Quasi In Situ XPS on a SiO x F y Layer Deposited on Silicon by a Cryogenic Process. ECS Journal of Solid State Science and Technology, 2022, 11 (1), pp.013013. ⟨10.1149/2162-8777/ac4c7d⟩. ⟨hal-03565995⟩
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